PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties

<table>High-frequency C-V curves measured for different sweep directions on as-deposited (open symbols) and annealed (filled symbols) nitride films deposited at 450°C.</table>

Advances in OptoElectronics

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Figure 4

Figure 4: PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties 