PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties
Figure 6
as a function of applied charge density calculated from (4) and (7) with respect to applied surface charge. PECVD was deposited at 400°C and the sample was subsequently annealed (30 mins 400°C in ). Negative and positive charge application is denoted by filled and empty symbols, respectively. All values were extracted from data measured at an injection level 015 cm-3.
