Review Article
Applications of Fianite in Electronics
Table 3
Parameters of growth and annealing of the fianite-on-Si films.
| Sample | of growth, C | Annealing, 600 C, 10 min | Film thickness, nm | Substrate |
| z1 | Room | Without annealing | ~20 | Si | z2 | Room | Vacuum | ~20 | Si | z3 | Room | Oxygen | ~20 | Si | z4 | Room | Oxygen | ~20 | Si | z5 | 600 | Oxygen | ~20 | Si |
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