About the Influence of SiO₂ on the Temperature Behaviour of Ruthenate Based Thick Film Resistors

Abstract

Substituting glass by SiO₂ in thick film resistors results in a small increase of R_□, a decrease of dR_□/dT and an increase of d²R_□/dT² (at room temperature). From these experimental results it follows that substituting glass by SiO₂ leads to an increase in the resistance of the tunnel barrier, determining the resistivity of the TFRs. The other microscopic quantities, like charging energy and HTCρ of ruthenate, are estimated using the model of Pike and Seager, the generalization of Which (necessary in order to take into account the influence of the strain dependence of R_□ and R_□ (T) in a correct way) is derived.