A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior

<div>Energy band distribution at the top cut line with TSi = 5 nm and TSi = 9 nm (VGS1 = 1 V, VGS2 = 0 V, VGS3 = 1 V.</div>

Active and Passive Electronic Components

Figure 8: A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior 