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International Journal of Photoenergy
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International Journal of Photoenergy
/
2014
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Article
/
Tab 1
/
Research Article
Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO
2
AlN/Sapphire Template
Table 1
Full width at half-maximum values of
rocking curves measured by XRD.
Sample
FWHM (arcsecs)
(002)
(004)
(006)
(102)
(105)
Sample-C
485
479
480
600
603
Sample-R
376
362
355
322
384
Sample-T
433
454
420
408
459
Sample-P
416
420
409
360
426