Analysis of Si/SiGe Heterostructure Solar Cell

Table 1

SiGe parameters at different mole fraction.

Materials
Properties	𝑥=0; Si	𝑥=0.1; Si0.9Ge0.1	𝑥=0.2; Si0.8Ge0.2	𝑥=0.3; Si0.7Ge0.3	𝑥=1; Ge
Dielectric constant (𝜀𝑟)	11.9	12.31	12.72	13.13	16
𝐷𝑝 (m^2/s)	2.458×10^−4	2.419×10^−4	2.38×10^−4	2.341×10^−4	2.07×10^−4
𝐷𝑛 (m^2/s)	6.986×10^−4	7.193×10^−4	7.40×10^−4	7.60×10^−4	9.056×10^−4
Energy gap 𝐸𝑔 (ev)	1.12	1.074	1.028	0.982	0.66
Effective density of states in valence band, 𝑁𝑣 (cm^−3)	1.04×10^19	9.96×10^18	9.52×10^18	9.08×10^18	6×10^18
Effective density of states in conduction band, 𝑁𝑐 (cm^−3)	2.8×10^19	2.62×10^19	2.44×10^19	2.27×10^19	1.04×10^19
Intrinsic carrier concentration (𝑛𝑖) (cm^−3)	1.45×10^10	2.413×10^12	4.81×10^12	7.21×10^12	2.4×10^13