Analysis of Si/SiGe Heterostructure Solar Cell

Table 2

Parametric value used in simulation.

Parameters	Value
Concentration (SiGe)	3×10^25 m^3
Concentration (Si)	3×10^22 m^3
Reflectivity (𝑅)	0.9
Device area (𝐴)	4×10^−4 m^2
𝑑SiGe	50 nm
𝑑Si	100 nm
𝜏𝑝	1×10^−8 s