Journal of Nanomaterials / 2018 / Article / Tab 1 / Research Article
Graphene Synthesis Using a CVD Reactor and a Discontinuous Feed of Gas Precursor at Atmospheric Pressure Table 1 Overview of CVD processes synthesis.
Substrate Annealing Growth conditions Temperature (°C) Total time (min) Ref. Gas Time (min) Precursor Flowrate (sccm) Gas ratio Pressure (torr) Cu-p H2 /Ar CH4 5 1 700 1045 >143 [26 ] Cu-p H2 /Ar 30 CH4 /Ar 15 1 : 1000 ---- 1050 125 [27 ] Cu-p H2 30 CH4 ---- 1 0.15 950 1620 [20 ] Cu (111) H2 5 CH4 35 1 3.9 × 10−2 1000 60 [21 ] Cu-p H2 /Ar 60–180 CH4 ---- 1 : 1000 1000 180 [28 ] Cu-p H2 20 CH4 /H2 50 1 : 1 0.35 1000 60 [29 ] Cu-p H2 CH4 /H2 5–20 2 : 1 0.01 1000 180 [30 ] Cu-p H2 /Ar 10 CH4 /H2 1–8 1 : 20 ---- 1000 [31 ] Cu-p H2 /Ar 5 CH4 ---- 1 10 1000 21 [27 ] Cu-p H2 /Ar 30 CH4 /Ar 40 1 : 9 ---- 950 160 [32 ] Ni H2 20 C2 H2 /H2 6–36 2 : 1 0.99 900 60 [33 ] Cu-p H2 /Ar 20 C2 H2 /Ar 1–12 12 : 1000 ---- 1000 150 [34 ] Cu-p H2 40 C2 H2 /H2 0.28 1 : 280 0.8 1035 95 [35 ] Cu-p H2 60 C2 H2 ---- 1 ---- 900 720 [36 ] Cu-p industrial grade N2 20 C2 H2 30 1 760 1000 66
Cu-p: copper polycrystalline laboratory grade.
This work.
Standard cubic centimeter per minute.
Note . In this table the time cooling and heating is not considered.