The Role of Annealing Treatment on Crystallographic, Optical, and Electrical Features of Bi₂O₃ Thin Films Prepared Using Reactive Plasma Sputtering Technology

Table 1

The electrical resistivity of Bi₂O₃ films sputtered for 40 min with an annealing temperature for 2 hr.

Sample	Annealing temperature (°C)	Resistivity (10^−3 Ωcm)
Bi preannealing	30	1.17
	150	1.10
	200	1.095
	250	0.67
	280	1.36
	300	2.58
	400	2.63
	500	2.71