Influence of Different Types of Recombination Active Defects on the Integral Electrical Properties of Multicrystalline Silicon Solar Cells

Figure 5

(a) Reverse current at = 11 V and area fraction of Type-A defects as a function of the wafer number. A correlation between the number of Type-A defects and the reverse current at −11 V can be seen. In (b) the area fraction of Type-A defects in dependence on the reverse current at = 11 V is shown.

(a)

(b)