Simulations Based on Experimental Data of the Behaviour of a Monocrystalline Silicon Photovoltaic Module

Table 1

Manufacture’s specifications of Solar H750 Helios Module.

Band gap energy of silicon at 300 K	1.12 eV
Ideality factor of the P-N junction	1.2
Short circuit current at STC	4.01 A
Open circuit voltage at STC	21.6 V
Current at MPP	3.47 A
Voltage at MPP	17.3 V
Maximum power at STC	60 Wp
Number of series-connected cells	36