Direct Current Sputter Epitaxy of Heavily Doped p<sup>+</sup> Layer for Monocrystalline Si Solar Cells

<div>(a)<i> J</i>-<i>V</i> characteristics and (b) IQE characteristics of p<sup>+</sup>nn<sup>+</sup> SCs with <svg height="12.5612pt" id="M58" style="vertical-align:-3.27287pt" version="1.1" viewbox="-0.0498162 -9.28833 24.2616 12.5612" width="24.2616pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M530 686C535 705 530 712 521 712C504 712 448 684 359 674L358 648H393C437 648 439 646 429 593L400 435C372 447 345 448 332 448C286 448 194 414 144 373C68 311 23 203 23 111C23 26 57 -12 91 -12C120 -12 147 3 188 29C227 54 290 102 341 170H343L322 71C308 6 320 -12 341 -12C373 -12 442 27 501 96L485 120C455 91 422 67 408 67C401 67 401 76 404 91C440 294 479 473 530 686ZM387 375L355 241C326 187 200 53 142 53C126 53 109 73 109 130C109 217 154 337 218 381C240 396 265 404 297 404S372 390 387 375Z" id="g113-101"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="555" vert-adv-y="555"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,7.15,3.132)"><path d="M380 106C343 72 306 56 265 56C195 56 116 112 115 248C235 252 361 262 377 265C396 269 400 277 400 297C400 374 333 449 250 449H249C198 449 144 421 103 376S37 269 37 201C37 88 109 -12 232 -12C263 -12 332 6 395 84L380 106ZM225 412C281 412 315 364 314 312C314 297 308 292 290 292C232 290 176 289 120 289C135 370 180 412 225 412Z" id="g190-102"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="425" vert-adv-y="425"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,11.018,3.132)"><path d="M797 0V26C739 32 732 36 732 103V296C732 394 682 449 605 449C576 449 550 437 529 423C504 407 475 389 446 366C425 418 382 449 334 449C303 449 279 437 253 421C222 403 201 385 180 371V452C135 432 85 419 41 411V388C99 379 102 374 102 310V103C102 38 93 32 27 26V0H238V26C189 32 180 38 180 103V338C210 363 250 390 289 390C351 390 377 348 377 275V103C377 37 368 32 306 26V0H520V26C465 32 456 38 456 101V296C456 314 455 326 453 338C491 369 529 390 565 390C628 390 653 345 653 274V107C653 36 642 32 583 26V0H797Z" id="g190-110"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="819" vert-adv-y="819"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,18.47,3.132)"><path d="M135 536C164 536 186 560 186 587C186 617 164 639 136 639C109 639 85 617 85 587C85 560 109 536 135 536ZM252 0V26C188 32 181 38 181 106V451C138 433 90 420 39 412V388C99 379 102 374 102 312V106C102 38 95 32 32 26V0H252Z" id="g190-106"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="268" vert-adv-y="268"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,20.8,3.132)"><path d="M298 36L289 62C276 55 253 45 228 45C202 45 169 60 169 141V397H276C289 405 292 426 282 437H169V574L155 576L90 509V437H45L17 408L21 397H90V107C90 28 125 -12 188 -12C198 -12 213 -8 230 1L298 36Z" id="g190-117"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="305" vert-adv-y="305"></glyph.data></g></svg> among 10 nm to 200 nm.</div>

Journal of Solar Energy

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Figure 7

Figure 7: Direct Current Sputter Epitaxy of Heavily Doped p<sup>+</sup> Layer for Monocrystalline Si Solar Cells 

Journal of Solar Energy

Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

Figure 7

Direct Current Sputter Epitaxy of Heavily Doped p⁺ Layer for Monocrystalline Si Solar Cells