Research Article
A Virtual Fabrication and High-Performance Design of 65 nm Nanocrystal Floating-Gate Transistor
Table 5
Nanocrystal floating-gate transistor performance comparison.
| | [17] | [19] | [20] | This work |
| Device structure | Structure | Nanocrystal (underlap channel) | Nanocrystal | Nanocrystal | Nanocrystal | Nanocrystal | Nanocrystal | Underlap channel length (nm) | 8 | X | X | X | X | X | Tunnel oxide thickness (nm) | 3.3 | 3.3 | 3.3 | 3.3 | 3.3 | 6 | Dot dimension [] (nm) | | | X | X | | | Dot material/dimension [] (nm) | Poly/ | Poly/ | Poly/ | Poly/ | Poly/ | Poly/ | IPD material/thickness (nm) | SiO2/10 | SiO2/10 | SiO2/10 | SiO2/10 | SiO2/10 | SiO2/15 | Control gate material/thickness (nm) | X | X | Poly/1000 | Aluminum/1000 | Aluminum/80 | Poly/80 | Device performance | W/E voltage (V) | 12/X | 12/X | 12/-12 | 12/-12 | 12/-12 | 12/-12 | Memory window (V) | 3.1 | 2.5 | 1.27 | 1.08 | 2.5 | 10.1 | Transient performance | Write speed (s) | 0.3 | 0.3 | 0.17 | 0.05 | 1.85 | 0.05 | Erase speed (s) | X | X | 0.215 | 0.180 | 0.2 | |
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X was not available.
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