A Virtual Fabrication and High-Performance Design of 65 nm Nanocrystal Floating-Gate Transistor

Table 5

Nanocrystal floating-gate transistor performance comparison.

	[17]		[19]		[20]	This work
Device structure
Structure	Nanocrystal (underlap channel)	Nanocrystal	Nanocrystal	Nanocrystal	Nanocrystal	Nanocrystal
Underlap channel length (nm)	8	X	X	X	X	X
Tunnel oxide thickness (nm)	3.3	3.3	3.3	3.3	3.3	6
Dot dimension [] (nm)			X	X
Dot material/dimension [] (nm)	Poly/	Poly/	Poly/	Poly/	Poly/	Poly/
IPD material/thickness (nm)	SiO2/10	SiO2/10	SiO2/10	SiO2/10	SiO2/10	SiO2/15
Control gate material/thickness (nm)	X	X	Poly/1000	Aluminum/1000	Aluminum/80	Poly/80
Device performance
W/E voltage (V)	12/X	12/X	12/-12	12/-12	12/-12	12/-12
Memory window (V)	3.1	2.5	1.27	1.08	2.5	10.1
Transient performance
Write speed (s)	0.3	0.3	0.17	0.05	1.85	0.05
Erase speed (s)	X	X	0.215	0.180	0.2

X was not available.