Light-Output Enhancement of GaN-Based Light-Emitting Diodes with Three-Dimensional Backside Reflectors Patterned by Microscale Cone Array

Table 1

Material parameters used in the simulation.

	Refractive index	Extinction coefficient
p-GaN	2.45	3.66 × 10^−4
n-GaN	2.42	3.66 × 10^−4
Sapphire	1.78	0
SiO2	1.4648	0
Polystyrene	1.6106	0
ZnO	2.0919	0
Ti3O5^∗	2.65144	0
Ti3O5^#	2.65144	1.4378 × 10^−3
Al	0.644	5.58
Ag	0.144	2.56

∗Parameters of Ti₃O₅ used for materials of cone array.
^#Parameters of Ti₃O₅ used for materials of Ti₃O₅/SiO₂ DBR.